MRFE6VP100HR5 Mosfet LDMOS MRFE6VP100H Transistor Electronic Components MRFE6VP100HS

Type : other, IGBT Transistor

Operating Temperature : /

Series : standard

Mounting Type : other

Description : /

Model Number : MRFE6VP100HR5

Place of Origin : Guangdong, China

Brand Name : original

D/C : 22+

Package Type : NI-780S-4

Application : other

Supplier Type : Other

Cross Reference : standard

Media Available : Other

Brand : /

Current - Collector (Ic) (Max) : /

Voltage - Collector Emitter Breakdown (Max) : /

Vce Saturation (Max) @ Ib, Ic : /

Current - Collector Cutoff (Max) : /

DC Current Gain (hFE) (Min) @ Ic, Vce : /

Power - Max : /

Frequency - Transition : /

Package / Case : /

Resistor - Base (R1) : /

Resistor - Emitter Base (R2) : /

FET Type : /

FET Feature : other

Drain to Source Voltage (Vdss) : /

Current - Continuous Drain (Id) @ 25°C : /

Rds On (Max) @ Id, Vgs : /

Vgs(th) (Max) @ Id : /

Gate Charge (Qg) (Max) @ Vgs : /

Input Capacitance (Ciss) (Max) @ Vds : /

Frequency : /, 512MHz

Current Rating (Amps) : /

Noise Figure : /

Power - Output : /, 100W

Voltage - Rated : /, 133V

Drive Voltage (Max Rds On, Min Rds On) : /

Vgs (Max) : /

IGBT Type : /

Configuration : other

Vce(on) (Max) @ Vge, Ic : /

Input Capacitance (Cies) @ Vce : /

Input : /

NTC Thermistor : /

Voltage - Breakdown (V(BR)GSS) : /

Current - Drain (Idss) @ Vds (Vgs=0) : standard

Current Drain (Id) - Max : /

Voltage - Cutoff (VGS off) @ Id : /

Resistance - RDS(On) : /

Voltage : /

Voltage - Output : /

Voltage - Offset (Vt) : /

Current - Gate to Anode Leakage (Igao) : /

Current - Valley (Iv) : /

Current - Peak : /

Applications : /

Transistor Type : mrf150 rf power transistor, LDMOS

Part Status : Active

Standard Package : 50

Packaging : Tape & Reel (TR)

Gain : 26dB

Voltage - Test : 50V

Current - Test : 100mA

Packaging Details : BOX

Port : shenzhen

Supply Ability : 100 Piece/Pieces per Week

Price : $214.00/pieces 1-9 pieces